i, o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor BU606 description ? high voltage: vcev= 400v(min) fast switching speed- : tf= 0.75 u s(max) ? low saturation voltage- :vce(?t)=1.0v(max)@lc=5a applications ? designed for use in horizontal deflection output stages of tv's and crt's absolute maximum ratings(ta=25'c) symbol vcbo vcev vceo vebo ic icp icp ib pc tj tstg parameter collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak repetitive collector current- peak (10ms) base current collector power dissipation @ tc=25"c junction temperature storage temperature range value 400 400 200 6 7 10 15 4 60 150 -65-150 unit v v v v a a a a w c r 3 ' 1 n* 2 pin 1.base 2. better 3. collect or (case) to-3 package r ? l f-e -a j 1 * i - c 1 -?41*- d zpl u. ? u~*{ h ? &~~ f v dm a b ^ d e cj h k l n q u v f ^s, _^s -sa / 1 p c \n mm max 39.00 25.30 7.9/0 090 t 40 26.67 8.30 mo 1.60 1092 546 11.40 1675 19.40 4.00 30.00 430 1350 17.05 ,1962 r~420 30 20 ^450 1 ob t ; b ? 1 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor BU606 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat) vee(sat) ices iebo fr cob tf parameter collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current current-gain ? bandwidth product output capacitance fall time conditions lc= 100ma;lb=0 lc= 5a; ib= 0.65a lc= 5a; ib= 0.65a vce= 400v; vbe= 0 vce=250v; vbe= 0 vce=250v; vbe= 0;tc= 150c veb= 6v; lc=0 lc= 0.5a ; vce= 1 0v, ftest= 20mhz ie= 0; vcb= 10v; ftest= 1.0mhz ic=5a;ib1=-i82=0.5a, l=150uh vcc= 40v min 200 10 typ. 80 max 1.0 1.2 5.0 0.1 1.0 1.0 0.75 unit v v v ma ma mhz pf u s
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